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ESD characterization of gate-all-around (GAA) Si nanowire devices

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorHellings, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorVeloso, Anabela
dc.contributor.authorScholz, Mirko
dc.contributor.authorBoschke, Roman
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T18:40:38Z
dc.date.available2021-10-22T18:40:38Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25068
dc.sourceIIOimport
dc.titleESD characterization of gate-all-around (GAA) Si nanowire devices
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage362
dc.source.endpage365
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
imec.availabilityPublished - open access


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