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dc.contributor.authorClima, Sergiu
dc.contributor.authorChen, Yangyin
dc.contributor.authorFantini, Andrea
dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorJurczak, Gosia
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-22T18:43:08Z
dc.date.available2021-10-22T18:43:08Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25088
dc.sourceIIOimport
dc.titleDesigning the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics
dc.typeMeeting abstract
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium AA: Materials for Beyond the Roadmap Devices in Logic, Power and Memory
dc.source.conferencedate6/04/2015
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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