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On the effects of a pressure iInduced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

dc.contributor.authorCoq Germanicus, Rosine
dc.contributor.authorLeclère, Philippe
dc.contributor.authorGuhel, Y.
dc.contributor.authorBoudart, B.
dc.contributor.authorTouboul, A. D.
dc.contributor.authorDescamps, P.
dc.contributor.authorHug, E.
dc.contributor.authorEyben, Pierre
dc.date.accessioned2021-10-22T18:44:56Z
dc.date.available2021-10-22T18:44:56Z
dc.date.issued2015
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25101
dc.sourceIIOimport
dc.titleOn the effects of a pressure iInduced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon
dc.typeJournal article
dc.contributor.imecauthorEyben, Pierre
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage244306
dc.source.journalJournal of Applied Physics
dc.source.issue24
dc.source.volume117
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/117/24/10.1063/1.4923052
imec.availabilityPublished - open access


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