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Excess carrier density variations in test structures for photoconductance-based contact recombination current measurements

dc.contributor.authorDeckers, Jan
dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorGordon, Ivan
dc.contributor.authorMertens, Robert
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-22T18:54:49Z
dc.date.available2021-10-22T18:54:49Z
dc.date.issued2015
dc.identifier.issn2156-3381
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25167
dc.sourceIIOimport
dc.titleExcess carrier density variations in test structures for photoconductance-based contact recombination current measurements
dc.typeJournal article
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage932
dc.source.endpage937
dc.source.journalIEEE Journal of Photovoltaics
dc.source.issue3
dc.source.volume5
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7042742
imec.availabilityPublished - open access


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