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Out-of-plane excess carrier density variations in point contact lattice-based test structures for QSSPC contact recombination current measurements

dc.contributor.authorDeckers, Jan
dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorMertens, Robert
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-22T18:55:11Z
dc.date.available2021-10-22T18:55:11Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25169
dc.sourceIIOimport
dc.titleOut-of-plane excess carrier density variations in point contact lattice-based test structures for QSSPC contact recombination current measurements
dc.typeProceedings paper
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage36
dc.source.endpage42
dc.source.conferenceProceedings of the 5th International Conference on Silicon Photovoltaics - SiliconPV
dc.source.conferencedate23/03/2015
dc.source.conferencelocationKonstanz Germany
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S1876610215007754
imec.availabilityPublished - open access
imec.internalnotesEnergy Procedia; Vol. 77


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