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A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications

dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorKuhn, Rudiger
dc.contributor.authorVleugels, Frank
dc.contributor.authorVancuyck, Geert
dc.contributor.authorCaymax, Matty
dc.contributor.authorMohadjeri, Babak
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-09-30T11:47:06Z
dc.date.available2021-09-30T11:47:06Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2522
dc.sourceIIOimport
dc.titleA 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVleugels, Frank
dc.contributor.imecauthorVancuyck, Geert
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage124
dc.source.endpage127
dc.source.conferenceProceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
dc.source.conferencedate27/09/1998
dc.source.conferencelocationMinneapolis, MN USA
imec.availabilityPublished - imec


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