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Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM

dc.contributor.authorDuan, M.
dc.contributor.authorZhang, J. F.
dc.contributor.authorManut, A.
dc.contributor.authorJi, Z.
dc.contributor.authorZhang, W.
dc.contributor.authorAsenov, A.
dc.contributor.authorGerrer, L.
dc.contributor.authorReid, D.
dc.contributor.authorRazaidi, H.
dc.contributor.authorVigar, D.
dc.contributor.authorChandra, V.
dc.contributor.authorAitken, R.
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-22T19:06:52Z
dc.date.available2021-10-22T19:06:52Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25231
dc.sourceIIOimport
dc.titleHot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage547
dc.source.endpage550
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
imec.availabilityPublished - open access


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