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5 x 20 Gb/s III-V on silicon electroabsorption modulator array heteregoneously, integrared with a 1.6nm channel-spacing silicon AWG

dc.contributor.authorFu, Xin
dc.contributor.authorHuang, Qiangsheng
dc.contributor.authorHu, Yingtao
dc.contributor.authorTassaert, Martijn
dc.contributor.authorVerbist, Jochem
dc.contributor.authorCheng, Jianxin
dc.contributor.authorMa, Keqi
dc.contributor.authorZhang, Jianhao
dc.contributor.authorChen, Kaixuan
dc.contributor.authorZhang, Chenzhao
dc.contributor.authorShi, Yaocheng
dc.contributor.authorBauwelinck, Johan
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorLiu, Liu
dc.contributor.authorHe, Sailing
dc.date.accessioned2021-10-22T19:17:08Z
dc.date.available2021-10-22T19:17:08Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25280
dc.sourceIIOimport
dc.title5 x 20 Gb/s III-V on silicon electroabsorption modulator array heteregoneously, integrared with a 1.6nm channel-spacing silicon AWG
dc.typeProceedings paper
dc.contributor.imecauthorBauwelinck, Johan
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecBauwelinck, Johan::0000-0001-5254-2408
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageSTu4F.2
dc.source.conferenceCLEO: Science and Innovations
dc.source.conferencedate10/05/2015
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttps://www.osapublishing.org/abstract.cfm?URI=CLEO_SI-2015-STu4F.2
imec.availabilityPublished - open access


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