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Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

dc.contributor.authorGencarelli, Federica
dc.contributor.authorShimura, Yosuke
dc.contributor.authorKumar, Arul
dc.contributor.authorVincent, Benjamin
dc.contributor.authorMoussa, Alain
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-22T19:22:13Z
dc.date.available2021-10-22T19:22:13Z
dc.date.issued2015
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25303
dc.sourceIIOimport
dc.titleAmorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage163
dc.source.endpage169
dc.source.journalThin Solid Films
dc.source.volume590
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0040609015007464
imec.availabilityPublished - imec


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