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Selective area MOVPE growth of GaAs-based III-V material on 300mm silicon for electronic and photonic applications

dc.contributor.authorGuo, Weiming
dc.contributor.authorMols, Yves
dc.contributor.authorLanger, Robert
dc.contributor.authorBarla, Kathy
dc.contributor.authorCaymax, Matty
dc.contributor.authorKunert, Bernardette
dc.contributor.authorDate, Lucien
dc.contributor.authorBao, Xinyu
dc.contributor.authorCarlson, David
dc.contributor.authorSanchez, Errol
dc.date.accessioned2021-10-22T19:33:04Z
dc.date.available2021-10-22T19:33:04Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25347
dc.sourceIIOimport
dc.titleSelective area MOVPE growth of GaAs-based III-V material on 300mm silicon for electronic and photonic applications
dc.typeMeeting abstract
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorDate, Lucien
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.source.peerreviewno
dc.source.conferenceE-MRS Fall Meeting
dc.source.conferencedate15/09/2015
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec


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