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Integration of SiGe in the p-MOS fin based FETs

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorKubicek, Stefan
dc.contributor.authorMannaert, Geert
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-22T19:42:44Z
dc.date.available2021-10-22T19:42:44Z
dc.date.issued2015-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25386
dc.sourceIIOimport
dc.titleIntegration of SiGe in the p-MOS fin based FETs
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage13
dc.source.endpage14
dc.source.conference9th International Conference on Silicon Epitaxy and Heterostructures - ICSI9
dc.source.conferencedate17/05/2015
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - imec


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