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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorZyulkov, Ivan
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-22T19:42:58Z
dc.date.available2021-10-22T19:42:58Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25387
dc.sourceIIOimport
dc.titleAn investigation of disilane-digermane precursors combination for low temperature SiGe epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorZyulkov, Ivan
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.conferencethe 9th International Conference of Silicon Epitaxy and Heterostructures - ICSI-9
dc.source.conferencedate17/05/2015
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - imec


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