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dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorVenegas, Rafael
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-22T19:46:34Z
dc.date.available2021-10-22T19:46:34Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25400
dc.sourceIIOimport
dc.titleInvestigation of trapping effects on Au-free AlGaN/GaN Schottky diodes fabricated on C-doped buffer layers
dc.typeMeeting abstract
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conferenceInternational Conference on Nitride Semiconductors - ICNS-11
dc.source.conferencedate30/08/2015
dc.source.conferencelocationBeijing China
imec.availabilityPublished - open access


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