Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
dc.contributor.author | Huber, Martin | |
dc.contributor.author | Silvestri, Marco | |
dc.contributor.author | Knuuttila, Lauri | |
dc.contributor.author | Pozzovivo, Gianmauro | |
dc.contributor.author | Andreev, Andrei | |
dc.contributor.author | Kadashchuk, Andriy | |
dc.contributor.author | Bonanni, Alberta | |
dc.contributor.author | Lundskog, Anders | |
dc.date.accessioned | 2021-10-22T19:47:05Z | |
dc.date.available | 2021-10-22T19:47:05Z | |
dc.date.issued | 2015-05 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/25402 | |
dc.source | IIOimport | |
dc.title | Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors | |
dc.type | Journal article | |
dc.contributor.imecauthor | Kadashchuk, Andriy | |
dc.identifier.doi | 10.1063/1.4927405 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 32106 | |
dc.source.journal | Applied Physics Letters | |
dc.source.issue | 3 | |
dc.source.volume | 107 | |
dc.identifier.url | http://scitation.aip.org/content/aip/journal/apl/107/3/10.1063/1.4927405 | |
imec.availability | Published - imec |
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