Publication:
Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
Loading...
Journal
Abstract
Description
Metrics
Views
1851 since deposited on 2021-10-22
1last month
Acq. date: 2025-12-11
Citations
Metrics
Views
1851 since deposited on 2021-10-22
1last month
Acq. date: 2025-12-11
Citations