Publication:

Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

Date

2015-05
Journal article
https://doi.org/10.1063/1.4927405
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dc.contributor.authorHuber, Martin
dc.contributor.authorSilvestri, Marco
dc.contributor.authorKnuuttila, Lauri
dc.contributor.authorPozzovivo, Gianmauro
dc.contributor.authorAndreev, Andrei
dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorBonanni, Alberta
dc.contributor.authorLundskog, Anders
dc.contributor.imecauthorKadashchuk, Andriy
dc.date.accessioned2021-10-22T19:47:05Z
dc.date.available2021-10-22T19:47:05Z
dc.date.issued2015-05
dc.identifier.doi10.1063/1.4927405
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25402
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/107/3/10.1063/1.4927405
dc.source.beginpage32106
dc.source.issue3
dc.source.journalApplied Physics Letters
dc.source.volume107
dc.title

Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

dc.typeJournal article
dspace.entity.typePublication
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