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Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
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Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
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Date
2015-05
Journal article
https://doi.org/10.1063/1.4927405
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Huber, Martin
;
Silvestri, Marco
;
Knuuttila, Lauri
;
Pozzovivo, Gianmauro
;
Andreev, Andrei
;
Kadashchuk, Andriy
;
Bonanni, Alberta
;
Lundskog, Anders
Journal
Applied Physics Letters
Abstract
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1851
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Acq. date: 2025-12-10
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Views
1851
since deposited on 2021-10-22
2
last month
1
last week
Acq. date: 2025-12-10
Citations