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TCAD-based methodology for reliability assessment of nanoscaled MOSFETs

dc.contributor.authorHussin, Razaidi
dc.contributor.authorGerrer, Louis
dc.contributor.authorAmoroso, Salvatore
dc.contributor.authorWang, Liping
dc.contributor.authorWeckx, Pieter
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVanderheyden, Annelies
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorKaczer, Ben
dc.contributor.authorAsenov, Asen
dc.date.accessioned2021-10-22T19:47:56Z
dc.date.available2021-10-22T19:47:56Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25405
dc.sourceIIOimport
dc.titleTCAD-based methodology for reliability assessment of nanoscaled MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage270
dc.source.endpage273
dc.source.conference11th Conference on Ph.D. Research in Microelectronics and Electronics - PRIME
dc.source.conferencedate29/06/2015
dc.source.conferencelocationGlasgow UK
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7251387
imec.availabilityPublished - open access


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