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Influence of precursor gas source on defect properties in Si1xGex epitaxial thin films

dc.contributor.authorIke, Shinichi
dc.contributor.authorSimoen, Eddy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorTakeuchi, Wakana
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.date.accessioned2021-10-22T19:49:41Z
dc.date.available2021-10-22T19:49:41Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25411
dc.sourceIIOimport
dc.titleInfluence of precursor gas source on defect properties in Si1xGex epitaxial thin films
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceMeeting in the Division of Crystals Science and Technology of JSAP (Japan Society of Applied Physics)
dc.source.conferencedate29/10/2015
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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