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dc.contributor.authorKamohara, Itaru
dc.contributor.authorGao, Weimin
dc.contributor.authorKlostermann, Ulrich
dc.contributor.authorSchmöller, Thomas
dc.contributor.authorDemmerle, Wolfgang
dc.contributor.authorLucas, Kevin
dc.contributor.authorDe Simone, Danilo
dc.contributor.authorHendrickx, Eric
dc.contributor.authorVandenberghe, Geert
dc.date.accessioned2021-10-22T20:02:10Z
dc.date.available2021-10-22T20:02:10Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25453
dc.sourceIIOimport
dc.titleExperimental validation of stochastic modeling for negative-tone develop EUV resist
dc.typeProceedings paper
dc.contributor.imecauthorGao, Weimin
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage942223
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography VI
dc.source.conferencedate22/02/2015
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2210865
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 9422


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