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Interplay between relaxation and defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography
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Interplay between relaxation and defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography
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Date
2015
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kumar, Arul
;
Demeulemeester, Jelle
;
Bogdanowicz, Janusz
;
Melkonyan, Davit
;
Wang, Wei
;
Loo, Roger
;
Vandervorst, Wilfried
;
Fleischmann, Claudia
;
Gencarelli, Federica
;
Shimura, Yosuke
Journal
Journal of Applied Physics
Abstract
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1946
since deposited on 2021-10-22
2
last month
Acq. date: 2026-01-07
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Metrics
Views
1946
since deposited on 2021-10-22
2
last month
Acq. date: 2026-01-07
Citations