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Interplay between relaxation and defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography

dc.contributor.authorKumar, Arul
dc.contributor.authorDemeulemeester, Jelle
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorMelkonyan, Davit
dc.contributor.authorWang, Wei
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorGencarelli, Federica
dc.contributor.authorShimura, Yosuke
dc.date.accessioned2021-10-22T20:16:23Z
dc.date.available2021-10-22T20:16:23Z
dc.date.issued2015
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25499
dc.sourceIIOimport
dc.titleInterplay between relaxation and defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography
dc.typeJournal article
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage25302
dc.source.journalJournal of Applied Physics
dc.source.issue2
dc.source.volume118
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/118/2/10.1063/1.4926473
imec.availabilityPublished - open access


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