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Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

dc.contributor.authorLee, Ko-Hui
dc.contributor.authorDegraeve, Robin
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBreuil, Laurent
dc.contributor.authorBlomme, Pieter
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-22T20:24:13Z
dc.date.available2021-10-22T20:24:13Z
dc.date.issued2015
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25524
dc.sourceIIOimport
dc.titleAssessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage45
dc.source.endpage50
dc.source.journalMicroelectronic Engineering
dc.source.volume147
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931715002221
imec.availabilityPublished - imec
imec.internalnotespaper from INFOS 2015


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