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Cryogenic etching processes applied to porous low-k materials using C4F8/SF6 plasmas

dc.contributor.authorLeroy, F.
dc.contributor.authorZhang, Liping
dc.contributor.authorTillocher, T.
dc.contributor.authorYatsuda, K.
dc.contributor.authorMaekawa, K
dc.contributor.authorNishimura, E
dc.contributor.authorLefaucheux, P
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorDussart, R
dc.date.accessioned2021-10-22T20:26:25Z
dc.date.available2021-10-22T20:26:25Z
dc.date.issued2015
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25531
dc.sourceIIOimport
dc.titleCryogenic etching processes applied to porous low-k materials using C4F8/SF6 plasmas
dc.typeJournal article
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.source.peerreviewyes
dc.source.beginpage435202
dc.source.journalJournal of Physics D: Applied Physics
dc.source.issue43
dc.source.volume48
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0022-3727/48/43/435202;jsessionid=F796BFA7BEDDB443951586DEF11045CB.c1
imec.availabilityPublished - imec


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