Show simple item record

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations

dc.contributor.authorLiang, Zhao
dc.contributor.authorClima, Sergiu
dc.contributor.authorMagyari-Köpe, Blanka
dc.contributor.authorJurczak, Gosia
dc.contributor.authorNishi, Yoshio
dc.date.accessioned2021-10-22T20:36:00Z
dc.date.available2021-10-22T20:36:00Z
dc.date.issued2015
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25560
dc.sourceIIOimport
dc.titleAb initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations
dc.typeJournal article
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage13504
dc.source.journalApplied Physics Letters
dc.source.issue1
dc.source.volume107
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/107/1/10.1063/1.4926337
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
32735.pdf
Size:
1.670Mb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record