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Ge epitaxial layer growth on Si in ultra narrow STI patterned structures

dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSun, Jianwu
dc.contributor.authorBender, Hugo
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T20:40:19Z
dc.date.available2021-10-22T20:40:19Z
dc.date.issued2015-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25573
dc.sourceIIOimport
dc.titleGe epitaxial layer growth on Si in ultra narrow STI patterned structures
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.source.peerreviewyes
dc.source.beginpage21
dc.source.endpage22
dc.source.conference9th International Conference on Si Epitaxy and Heterostructures - ICSI9
dc.source.conferencedate17/05/2014
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - imec


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