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dc.contributor.authorLorusso, Gian
dc.contributor.authorMao, Ming
dc.contributor.authorReijnen, Liesbeth
dc.contributor.authorViatkina, Katja
dc.contributor.authorKnops, Roel
dc.contributor.authorFliervoet, Timon
dc.date.accessioned2021-10-22T20:41:36Z
dc.date.available2021-10-22T20:41:36Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25577
dc.sourceIIOimport
dc.titleInfluence of etch process on contact hole local critical dimension uniformity in extreme-ultraviolet lithography
dc.typeProceedings paper
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorMao, Ming
dc.contributor.imecauthorReijnen, Liesbeth
dc.contributor.imecauthorFliervoet, Timon
dc.source.peerreviewyes
dc.source.beginpage94250K
dc.source.conferenceAdvances in Patterning Materials and Processes XXXII
dc.source.conferencedate22/02/2015
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2211092
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 9425


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