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Formation of continuous and ultra-thin PtSi layers for infrared detector applications

dc.contributor.authorDonaton, R. A.
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.date.accessioned2021-09-30T11:53:51Z
dc.date.available2021-09-30T11:53:51Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2557
dc.sourceIIOimport
dc.titleFormation of continuous and ultra-thin PtSi layers for infrared detector applications
dc.typeOral presentation
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.source.peerreviewno
dc.source.conferenceWorkshop on Nanoscale Characterization of Silicide/Semiconductor Contacts by Scanning Probe Microscopy; 24 Sept. 1998; Gent, Bel
dc.source.conferencelocation
imec.availabilityPublished - imec


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