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200mm GaN-on-Si epitaxy and e-mode device technology

dc.contributor.authorMarcon, Denis
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-22T20:52:31Z
dc.date.available2021-10-22T20:52:31Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25609
dc.sourceIIOimport
dc.title200mm GaN-on-Si epitaxy and e-mode device technology
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage16.2
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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