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Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

dc.contributor.authorMarcon, Denis
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorPosthuma, Niels
dc.contributor.authorWellekens, Dirk
dc.contributor.authorYou, Shuzhen
dc.contributor.authorKang, Xuanwu
dc.contributor.authorWu, Tian-Li
dc.contributor.authorWillems, Maarten
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-22T20:52:55Z
dc.date.available2021-10-22T20:52:55Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25610
dc.sourceIIOimport
dc.titleDirect comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorWillems, Maarten
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage936311
dc.source.conferenceGallium Nitride Materials and Devices X
dc.source.conferencedate13/02/2015
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://spie.org/Publications/Proceedings/Paper/10.1117/12.2077806
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 9363


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