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Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4 -precursor and H2 -plasma

dc.contributor.authorMinjauw, Matthias
dc.contributor.authorDendooven, Jolien
dc.contributor.authorCapon, Boris
dc.contributor.authorSchaekers, Marc
dc.contributor.authorDetavernier, Christophe
dc.date.accessioned2021-10-22T21:06:10Z
dc.date.available2021-10-22T21:06:10Z
dc.date.issued2015
dc.identifier.issn2050-7526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25646
dc.sourceIIOimport
dc.titleNear room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4 -precursor and H2 -plasma
dc.typeJournal article
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewyes
dc.source.beginpage4848
dc.source.endpage4851
dc.source.journalJournal of Materials Chemistry C
dc.source.issue19
dc.source.volume3
dc.identifier.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2015/TC/C5TC00751H#!divAbstract
imec.availabilityPublished - imec


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