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Atomic layer deposition of ruthenium at 100°C using the RuO4-precursor and H2

dc.contributor.authorMinjauw, Matthias
dc.contributor.authorDendooven, Jolien
dc.contributor.authorCapon, Boris
dc.contributor.authorSchaekers, Marc
dc.contributor.authorDetavernier, Christophe
dc.date.accessioned2021-10-22T21:06:31Z
dc.date.available2021-10-22T21:06:31Z
dc.date.issued2015
dc.identifier.issn2050-7526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25647
dc.sourceIIOimport
dc.titleAtomic layer deposition of ruthenium at 100°C using the RuO4-precursor and H2
dc.typeJournal article
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage132
dc.source.endpage137
dc.source.journalJournal of Materials Chemistry C
dc.source.issue1
dc.source.volume3
dc.identifier.urlhttp://pubs.rsc.org/en/content/articlelanding/2015/tc/c4tc01961j#!divAbstract
imec.availabilityPublished - imec


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