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Towards the integration of In53Ga47As on 300 mm Si for CMOS sub 7 nm node: development of thin graded InGaAs buffers

dc.contributor.authorMols, Yves
dc.contributor.authorKunert, Bernardette
dc.contributor.authorGaudin, Gweltaz
dc.contributor.authorLanger, Robert
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-22T21:12:24Z
dc.date.available2021-10-22T21:12:24Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25663
dc.sourceIIOimport
dc.titleTowards the integration of In53Ga47As on 300 mm Si for CMOS sub 7 nm node: development of thin graded InGaAs buffers
dc.typeMeeting abstract
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.source.peerreviewyes
dc.source.conference20th American Conf on Crystal Growth and Epitaxy - ACCGE-20 and 17th Biennial Ws on Organometallic Vapor Phase Epitaxy- OMVPE-17
dc.source.conferencedate2/08/2015
dc.source.conferencelocationBig Sky, MT USA
imec.availabilityPublished - imec


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