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Atomistic modeling of pocket dopant deactivation and its impact on Vth variation in scaled Si planar devices using an atomistic kinetic Monte Carlo approach

dc.contributor.authorNoda, Taiji
dc.contributor.authorVrancken, Christa
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-22T21:24:22Z
dc.date.available2021-10-22T21:24:22Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25695
dc.sourceIIOimport
dc.titleAtomistic modeling of pocket dopant deactivation and its impact on Vth variation in scaled Si planar devices using an atomistic kinetic Monte Carlo approach
dc.typeJournal article
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1789
dc.source.endpage1795
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue6
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7101843
imec.availabilityPublished - open access


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