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Effect of test structure on electromigration characteristics in 3D-TSV stacked devices

dc.contributor.authorOba, Yoshiyuki
dc.contributor.authorDe Messemaeker, Joke
dc.contributor.authorTyrovouzi, Anna-Maria
dc.contributor.authorMiyamori, Yuichi
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorWang, Teng
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorCroes, Kristof
dc.date.accessioned2021-10-22T21:25:38Z
dc.date.available2021-10-22T21:25:38Z
dc.date.issued2015
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25698
dc.sourceIIOimport
dc.titleEffect of test structure on electromigration characteristics in 3D-TSV stacked devices
dc.typeJournal article
dc.contributor.imecauthorDe Messemaeker, Joke
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorCroes, Kristof
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.source.peerreviewyes
dc.source.beginpage05EE01
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue5S
dc.source.volume54
dc.identifier.urlhttp://m.iopscience.iop.org/1347-4065/54/5S/05EE01/pdf/1347-4065_54_5S_05EE01.pdf
imec.availabilityPublished - imec


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