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Dynamic threshold voltage influence on Ge pMOSFET hysteresis

dc.contributor.authorOliveira, A. V.
dc.contributor.authorAgopian, P. G. D.
dc.contributor.authorMartino, A.
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorMertens, Hans
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T21:27:32Z
dc.date.available2021-10-22T21:27:32Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25703
dc.sourceIIOimport
dc.titleDynamic threshold voltage influence on Ge pMOSFET hysteresis
dc.typeProceedings paper
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conference30th Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate31/08/2015
dc.source.conferencelocationSalvado Bahia Brazil
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7298118
imec.availabilityPublished - open access


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