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Dopant effects in sol-gel based PZT based ferroelectric memories: lanthanum vs tantalum

dc.contributor.authorFè, Laura
dc.contributor.authorWouters, D. J.
dc.contributor.authorNorga, Gerd
dc.contributor.authorBartic, T. A.
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-30T11:56:38Z
dc.date.available2021-09-30T11:56:38Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2570
dc.sourceIIOimport
dc.titleDopant effects in sol-gel based PZT based ferroelectric memories: lanthanum vs tantalum
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conferenceMRS Fall Meeting; 30 Nov. - 4 Dec. 1998; Boston, MA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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