Dopant effects in sol-gel based PZT based ferroelectric memories: lanthanum vs tantalum
dc.contributor.author | Fè, Laura | |
dc.contributor.author | Wouters, D. J. | |
dc.contributor.author | Norga, Gerd | |
dc.contributor.author | Bartic, T. A. | |
dc.contributor.author | Maes, Herman | |
dc.date.accessioned | 2021-09-30T11:56:38Z | |
dc.date.available | 2021-09-30T11:56:38Z | |
dc.date.issued | 1998 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/2570 | |
dc.source | IIOimport | |
dc.title | Dopant effects in sol-gel based PZT based ferroelectric memories: lanthanum vs tantalum | |
dc.type | Oral presentation | |
dc.source.peerreview | no | |
dc.source.conference | MRS Fall Meeting; 30 Nov. - 4 Dec. 1998; Boston, MA, USA. | |
dc.source.conferencelocation | ||
imec.availability | Published - imec |
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