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Nonparabolicity and confinement effects of IIIV materials in novel transistors

dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T21:55:00Z
dc.date.available2021-10-22T21:55:00Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25772
dc.sourceIIOimport
dc.titleNonparabolicity and confinement effects of IIIV materials in novel transistors
dc.typeProceedings paper
dc.contributor.imecauthorThean, Aaron
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage3
dc.source.conference2015 International Conference on IC Design & Technology (ICICDT)
dc.source.conferencedate1/06/2015
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7165888
imec.availabilityPublished - open access


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