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Interaction of F atoms with SiCOH ultra low-k films. Part II: Etching

dc.contributor.authorRakhimova, T.
dc.contributor.authorLopaev, D.
dc.contributor.authorMankelevich, Y.
dc.contributor.authorKurchikov, K.
dc.contributor.authorZyryanov, S.
dc.contributor.authorPalov, A.P.
dc.contributor.authorProshina, O.V.
dc.contributor.authorMaslakov, K.
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-22T22:05:25Z
dc.date.available2021-10-22T22:05:25Z
dc.date.issued2015
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25796
dc.sourceIIOimport
dc.titleInteraction of F atoms with SiCOH ultra low-k films. Part II: Etching
dc.typeJournal article
dc.source.peerreviewyes
dc.source.beginpage175204
dc.source.journalJournal of Physics D: Applied Physics
dc.source.issue17
dc.source.volume48
dc.identifier.urlhttp://iopscience.iop.org/0022-3727/48/17/175204/
imec.availabilityPublished - imec


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