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Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI
Publication:
Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI
Date
2015
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Claeys, Cor
;
Fang, Wen
;
Luo, Jun
;
Zhao, Chao
Journal
Abstract
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1839
since deposited on 2021-10-22
413
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Acq. date: 2025-10-25
Citations
Metrics
Views
1839
since deposited on 2021-10-22
413
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations