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Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI
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Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI
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Date
2015
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Claeys, Cor
;
Fang, Wen
;
Luo, Jun
;
Zhao, Chao
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Abstract
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1841
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Acq. date: 2025-12-11
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Views
1841
since deposited on 2021-10-22
1
last month
Acq. date: 2025-12-11
Citations