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Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes

dc.contributor.authorSmets, Quentin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-22T23:01:40Z
dc.date.available2021-10-22T23:01:40Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25926
dc.sourceIIOimport
dc.titleNovel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes
dc.typeProceedings paper
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage251
dc.source.endpage252
dc.source.conference73rd Annual Device Research Conference -DRC
dc.source.conferencedate21/06/2015
dc.source.conferencelocationColumbus, Oh USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7175664
imec.availabilityPublished - open access


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