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The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion

dc.contributor.authorStoffels, Steve
dc.contributor.authorZhao, Ming
dc.contributor.authorVenegas, Rafael
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorYou, Shuzhen
dc.contributor.authorNovak, Thomas
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-22T23:09:59Z
dc.date.available2021-10-22T23:09:59Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25944
dc.sourceIIOimport
dc.titleThe physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion
dc.typeProceedings paper
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage911
dc.source.endpage914
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2015
dc.source.conferencelocationWashington, D.C. USA
imec.availabilityPublished - open access


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