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Noise coupling between TSVs and active devices: planar nMOSFETs vs. nFinFETs

dc.contributor.authorSun, Xiao
dc.contributor.authorRouhi Najaf Abadi, Alireza
dc.contributor.authorGuo, Wei
dc.contributor.authorBel Ali, K.
dc.contributor.authorRack, M.
dc.contributor.authorRoda Neve, Cesar
dc.contributor.authorChoi, M.
dc.contributor.authorMoroz, V.
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorRaskin, J.P.
dc.contributor.authorVan der Plas, Geert
dc.contributor.authorBeyne, Eric
dc.contributor.authorAbsil, Philippe
dc.date.accessioned2021-10-22T23:13:55Z
dc.date.available2021-10-22T23:13:55Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25952
dc.sourceIIOimport
dc.titleNoise coupling between TSVs and active devices: planar nMOSFETs vs. nFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSun, Xiao
dc.contributor.imecauthorGuo, Wei
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorVan der Plas, Geert
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecVan der Plas, Geert::0000-0002-4975-6672
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage260
dc.source.endpage265
dc.source.conferenceIEEE 65th Electronic Components & Technology Conference - ECTC
dc.source.conferencedate26/05/2015
dc.source.conferencelocationSan Diego, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7159602
imec.availabilityPublished - open access


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