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A unified two-band model for oxide traps and interface states in MOS capacitors

dc.contributor.authorTaur, Yuan
dc.contributor.authorChen, Han-Ping
dc.contributor.authorXie, Qian
dc.contributor.authorAhn, Jaesoo
dc.contributor.authorMcIntyre, Paul
dc.contributor.authorLin, Dennis
dc.contributor.authorVais, Abhitosh
dc.contributor.authorVeskler, Dimitri
dc.date.accessioned2021-10-22T23:28:52Z
dc.date.available2021-10-22T23:28:52Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25985
dc.sourceIIOimport
dc.titleA unified two-band model for oxide traps and interface states in MOS capacitors
dc.typeJournal article
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage813
dc.source.endpage820
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume62
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7027192
imec.availabilityPublished - open access


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