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In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs

dc.contributor.authorTrevisoli, R.
dc.contributor.authorde Souza, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPavanello, M.A.
dc.date.accessioned2021-10-22T23:39:07Z
dc.date.available2021-10-22T23:39:07Z
dc.date.issued2015
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26006
dc.sourceIIOimport
dc.titleIn-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage92
dc.source.endpage95
dc.source.journalMicroelectronic Engineering
dc.source.volume147
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931715002683
imec.availabilityPublished - imec


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