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Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach

dc.contributor.authorWu, Qian
dc.contributor.authorPorti, Marc
dc.contributor.authorBayerl, Albin
dc.contributor.authorMartin-Martinez, Javier
dc.contributor.authorRodriguez, Rosana
dc.contributor.authorNafria, Montserrat
dc.contributor.authorAymerich, Xavier
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-23T01:08:03Z
dc.date.available2021-10-23T01:08:03Z
dc.date.issued2015
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26190
dc.sourceIIOimport
dc.titleChannel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage22202
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue2
dc.source.volume33
dc.identifier.urlhttp://scitation.aip.org/content/avs/journal/jvstb/33/2/10.1116/1.4913950
imec.availabilityPublished - open access


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