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The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorLin, Dennis
dc.contributor.authorStoffels, Steve
dc.contributor.authorKang, Xuanwu
dc.contributor.authorRoelofs, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T01:09:11Z
dc.date.available2021-10-23T01:09:11Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26192
dc.sourceIIOimport
dc.titleThe impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage225
dc.source.endpage228
dc.source.conferenceIEEE 27th International Symposium on Power Semiconductor Devices and ICs - ISPSD
dc.source.conferencedate10/05/2014
dc.source.conferencelocationHong Kong China
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7123430
imec.availabilityPublished - imec


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