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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorYou, Shuzhen
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBisi, Davide
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T01:10:19Z
dc.date.available2021-10-23T01:10:19Z
dc.date.issued2015
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26194
dc.sourceIIOimport
dc.titleAnalysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage127
dc.source.endpage130
dc.source.journalSolid-State Electronics
dc.source.volume103
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0038110114002159
imec.availabilityPublished - imec


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