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Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs

dc.contributor.authorXing, Guo
dc.contributor.authorHatchtel, Jordan
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPantelides, Sokrates
dc.date.accessioned2021-10-23T01:14:51Z
dc.date.available2021-10-23T01:14:51Z
dc.date.issued2015-09
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26203
dc.sourceIIOimport
dc.titleActivation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage352
dc.source.endpage357
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue3
dc.source.volume15
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7118163
imec.availabilityPublished - imec


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