Show simple item record

Si-passivated Ge nMOS gate stack with low DIT and dipole-induced superior PBTI reliability using 3D-compatible ALD caps and high-pressure anneal

dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCott, Daire
dc.contributor.authorLoo, Roger
dc.contributor.authorVanherle, Wendy
dc.contributor.authorXie, Qi
dc.contributor.authorTang, Fu
dc.contributor.authorJiang, Xiaoqiang
dc.contributor.authorFranco, Jacopo
dc.contributor.authorSioncke, Sonja
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorChiu, Eddie
dc.contributor.authorLu, Xiaowan
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorMaes, Jan
dc.contributor.authorGivens, Michael
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorWostyn, Kurt
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Dan
dc.date.accessioned2021-10-23T10:04:45Z
dc.date.available2021-10-23T10:04:45Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26290
dc.sourceIIOimport
dc.titleSi-passivated Ge nMOS gate stack with low DIT and dipole-induced superior PBTI reliability using 3D-compatible ALD caps and high-pressure anneal
dc.typeProceedings paper
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorGivens, Michael
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage834
dc.source.endpage837
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate3/12/2016
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
34400.pdf
Size:
370.6Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record